摘要
Ge-on-Si is an attractive material platform for mid-IR broadband sources on a chip because of its wide transparency window, high Kerr nonlinearity and CMOS compatibility. We present a low-loss Ge-on-Si waveguide with flat and low dispersion from 3 to 11 mu m, which enables a coherent supercontinuum from 2 to 12 mu m, generated using a sub-ps pulsed pump. We show that 700-fs pump pulses with a low peak power of 400 W are needed to generate such a wide supercontinuum, and the waveguide length is around 5.35 mm.
- 出版日期2017-7-10
- 单位天津大学