A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters

Cristoloveanu, S.<sup>*</sup>; Lee, K. H.; Parihar, M. S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J. -Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T.; Wan, J.; Bawedin, M.

doi:10.1016/j.sse.2017.11.012

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A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters

作者：Cristoloveanu, S.^*; Lee, K. H.; Parihar, M. S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J. -Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T.; Wan, J.; Bawedin, M.

来源：Solid-State Electronics, 2018, 143: 10-19.

DOI：10.1016/j.sse.2017.11.012

摘要

The band-modulation and sharp-switching mechanisms in Z(2)-FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations. This 1T-DRAM memory does not suffer from super-coupling effect and can be integrated in sub-10 nm thick SOI films. It offers low leakage current, high current margin, long retention, low operating voltage especially for programming, and high speed. The Z(2)-FET is suitable for embedded memory applications.