Microstructural and electrical properties of 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) (PMN-PT) epitaxial films grown on Si substrates

作者：Jiang Juan; Hwang Hyun Hee; Lee Won Jae; Yoon Soon Gil^*

来源：Sensors and Actuators B: Chemical , 2011, 155(2): 854-858.

DOI：10.1016/j.snb.2011.01.061

• Pulsed laser deposition
• PMN-PT epitaxial films
• LSCO bottom electrode
• CeO2 and YSZ buffered Si substrate

Epitaxially grown PMN-PT thin films using the PMN-PT single crystal targets were prepared at 550 C on appropriate buffer layers of LSCO/CeO2/YSZ deposited on a Si substrate using pulsed laser deposition. The micro-structural and the electrical properties of the films were investigated as a function of the film thickness. The PMN-PT films with the thickness from 200 to 600 nm exhibited an epitaxial nature with a pure perovskite structure. On the other hand, the films above 700 nm included a pyrochlore phase embedded in the perovskite structure although they exhibited an epitaxial nature. A pyrochlore phase included in the films above 700 nm thickness decreased the dielectric constant and the ferroelectric properties of the PMN-PT films.

• 出版日期2011-7-20