Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits

作者：Ildefonso Adrian^*; Coen Christopher T; Fleetwood Zachary E; Tzintzarov George N; Wachter Mason T; Khachatrian Ani; McMorrow Dale; Warner Jeffrey H; Paki Pauline; Cressler John D

来源：IEEE Transactions on Nuclear Science, 2018, 65(1): 239-248.

DOI：10.1109/TNS.2017.2772924

• RF systems
• silicon germanium heterojunction bipolar transistors (SiGe HBTs)
• single-event transients (SETs)
• two-photon absorption (TPA) laser testing

This paper demonstrates the use of an RF power detector to sense the occurrence of single-event transients (SETs) in RF circuits and systems. The detector was connected to a low-noise amplifier (LNA), and the relationship between the detector output and the LNA transients was investigated via two-photon absorption, pulsed-laser testing, together with mixed mode TCAD simulations. The response of the detector shows a strong correlation with the RF power of the generated SET. An analytical expression for the detector output is derived and utilized to fit the data. The effects of parameters affecting circuit performance on the detector response to SETs are explored using calibrated TCAD mixed-mode simulations, and design tradeoffs are presented. Finally, a solution to distinguish between transients generated in the detector from those generated in the circuit being monitored is proposed and verified in simulation. The use of detectors to monitor SETs in RF systems could lead to judicious deployment of detection-driven SET mitigation techniques.

• 出版日期2018-1