Assessing the precision of strain measurements using electron backscatter diffraction - Part 2: Experimental demonstration

作者：Britton T B^*; Jiang J; Clough R; Tarleton E; Kirkland A I; Wilkinson A J

来源：Ultramicroscopy, 2013, 135: 136-141.

DOI：10.1016/j.ultramic.2013.08.006

• EBSD
• Strain
• Cross correlation
• Finite element analysis
• Silicon
• Indentation

The residual impression after performing a microhardness indent in silicon has been mapped with high resolution EBSD to reveal residual elastic strain and lattice rotation fields. Mapping of the same area has been performed with variable pattern binning and exposure times to reveal the qualitative and quantitative differences resulting from reducing the pattern size and exposure time. Two dimension 'image' plots of these fields indicate that qualitative assessment of the shape and size of the fields can be performed with as much as 4 x 4 binning. However, quantitative assessment using line scans reveals that the smoothest profile can be obtained using minimal pattern binning and long exposure times. To compare and contrast with these experimental maps, finite element analysis has been performed using a continuum damage-plasticity material law which has been independently calibrated to Si [9]. The constitutive law incorporates isotropic hardening in compression, and isotropic hardening and damage in tension. To accurately capture the localised damage which develops during indentation via the nucleation and propagation of cracks around the indentation site cohesive elements were assigned along the interfaces between the planes which experience the maximum traction. The residual strain state around the indenter and the size of the cracks agree very well with the experimentally measured value.

• 出版日期2013-12