科研之友
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摘要
Simultaneous two-level lasing, corresponding to ground level and excited level transitions in GaInAsSb/GaSb quantum well lasers under continuous wave operation is reported. The effect is attributed to a slowed-down intersubband relaxation in the quantum wells due to buildup of hot phonon population resulting in an incomplete clamping of the excited state population above the ground level lasing threshold.
- 出版日期2009-8-17
