AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-mu m-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

作者：Yu Xin Xin; Ni Jin Yu; Li Zhong Hui^*; Kong Cen; Zhou Jian Jun; Dong Xun; Pan Lei; Kong Yue Chan; Chen Tang Sheng

来源：Chinese Physics Letters, 2014, 31(3): 037201.

DOI：10.1088/0256-307X/31/3/037201

We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 mu m. The HEMT with a gate width W-G of 300 mu m acquires a maximum off-state breakdown voltage (BV) of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance L-GD until it exceeds 8 mu m and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of L-GD. The HEMT with a W-G of 3 mm and a L-GD of 8 mu m obtains an off-state BV of 500 V. Its maximum leakage current is just 13 mu A when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.

• 出版日期2014-3