Analysis and optimization of current sensing circuit for deep sub-micron SRAM

作者：Wang Yiqi; Zhao Fazhan; Liu Mengxin; Lü Yinxue; Zhao Bohua; Han Zhensheng^*

来源：Chinese Journal of Semiconductors, 2011, 32(11).

DOI：10.1088/1674-4926/32/11/115016

• Current sense amplifiers
• Current sensing
• Current-sensing circuits
• Deep sub-micron
• Delay Time
• Failure Probability
• mismatch
• Quantitative yields
• Random dopant fluctuation
• Time of control
• Transistor size
• yield and speed optimization

A quantitative yield analysis of a traditional current sensing circuit considering the random dopant fluctuation effect is presented. It investigates the impact of transistor size, falling time of control signal CS and threshold voltage of critical transistors on failure probability of current sensing circuit. On this basis, we present a final optimization to improve the reliability of current sense amplifier. Under 90 nm process, simulation shows that failure probability of current sensing circuit can be reduced by 80% after optimization compared with the normal situation and the delay time only increases marginally.

• 出版日期2011