AlGaAs/InGaP interfaces in structures prepared by MOVPE

作者：Kudela Robert^*; Kucera Michal; Dobrocka Edmund; Soltys Jan

来源：Journal of Crystal Growth, 2009, 311(11): 3123-3129.

DOI：10.1016/j.jcrysgro.2009.03.004

• Interfaces
• Metalorganic vapor phase epitaxy
• Semiconducting indium gallium phosphide
• Semiconducting aluminum compounds
• Semiconducting gallium compounds

Al(0.3)Ga(0.7)As/In(1-x)Ga(x)P structures were prepared by low-pressure MOVPE. Lattice matched and strained ones with top In(1-x)Ga(x)P layers as well as reverse ones with top Al(0.3)Ga(0.7)As layers were examined. The structures were studied by photoluminescence, X-ray and atomic force microscope (AFM) methods. An additional photoluminescence peak from the Al(0.3)Ga(0.7)As/In(1-x)Ga(x)P interface was observed in our samples and it was attributed to a type-II band offset. A conduction band offset of 0.121 eV was measured in the Al(0.3)Ga(0.7)As/In(0.485)Ga(0.515)P lattice-matched structure and a linear dependence of the conduction band offset on In(1-x)Ga(x)P composition, with a zero offset in the Al(0.3)Ga(0.7)As/In(0.315)Ga(0.685)P structure, was determined. The valence band discontinuity had a nearly constant value of 0.152 eV.

• 出版日期2009-5-15
• 单位中国科学院电工研究所