High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

作者：Li Zhi^*; Fu Yang; Piels Molly; Pan Huapu; Beling Andreas; Bowers John E; Campbell Joe C

来源：Optics Express, 2011, 19(26): 385-390.

DOI：10.1364/OE.19.00B385

We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

• 出版日期2011-12-12