Memory effect of a single-walled carbon nanotube on nitride-oxide structure under various bias conditions

作者：Park Hongsik^*; Shin Hyunjung; Kim Jin Ho; Hong Seungbum; Xu Jimmy

来源：Applied Physics Letters, 2010, 96(2): 023101.

DOI：10.1063/1.3291054

• carbon nanotubes
• electronic structure
• MIS structures

We report on the memory effect of single-walled carbon nanotubes (SWNTs) placed on a nitride-oxide layer structure designed as a charge storage medium. The conductance of the SWNT was modulated by the injected charge in the nitride-oxide interface and the polarities of injected charges were then detected. A large on/off-state current ratio (>10(4)) was obtained at a small program/erase voltage range (< 3 V). We also studied the effect of a half-selected cell on the conductance of the SWNTs to identify the issues with cross-point memory architecture.

• 出版日期2010-1-11