Distributed feedback laser employing buried GaAs/InGaP index-coupled grating

作者：Stevens B J^*; Groom K M; Roberts J S; Fry P W; Childs D T D; Hogg R A

来源：Electronics Letters, 2010, 46(15): 1076-U51.

DOI：10.1049/el.2010.1605

The realisation of a GaAs-based distributed feedback laser based upon regrowth of standard AlGaAs upper cladding upon patterned InGaP is presented. Regrowth upon exposed AlGaAs surfaces during its fabrication is avoided. Gratings technology is applied to an In(0.17)Ga(0.83)As double quantum well laser emitting at 1 mu m and demonstrates similar to 30 dB sidemode suppression with as-cleaved facets.

• 出版日期2010-7-22