A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs

作者：Sahoo Amit Kumar^*; Fregonese Sebastien; Desposito Rosario; Aufinger Klaus; Maneux Cristell; Zimmer Thomas

来源：IEEE Electron Device Letters, 2015, 36(1): 56-58.

DOI：10.1109/LED.2014.2375331

• Heterojunction bipolar transistors
• thermal impedance
• electrothermal effects
• semiconductor device measurements

This letter presents a geometry scalable approach for the calculation of temperature dependent thermal impedance (Z(TH)) in trench-isolated heterojunction bipolar transistors. The model is capable of predicting the Z(TH) at any desired temperature and bias points. The temperature dependency is derived by discretizing the heat flow region into n number of elementary slices depending on the thermal gradient. Temperature dependent thermal resistances R(th)s and capacitances C(th)s for each of the slices are calculated in a self-consistent manner. Finally, the proposed model is validated with low-frequency measurements at different ambient temperatures (T-amb) for different transistor geometries and found to be in good agreement.

• 出版日期2015-1