Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon

作者：Mathews, J.^*; Beeler, R. T.; Tolle, J.; Xu, C.; Roucka, R.; Kouvetakis, J.; Menendez, J.

来源：Applied Physics Letters, 2010, 97(22): 221912.

DOI：10.1063/1.3521391

• BAND-GAP
• STRAIN

Direct-gap photoluminescence has been observed at room temperature in Ge1-ySny alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1-ySny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si.

• 出版日期2010-11-29