A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

作者：Lu, Yuanxi; Huang, Jian^*; Li, Bing; Tang, Ke^*; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

来源：Applied Surface Science, 2018, 428: 61-65.

DOI：10.1016/j.apsusc.2017.09.053

• ZnO
• Heterojunction
• Magnetron sputtering
• UV

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

• 出版日期2018-1-15
• 单位上海大学