Al-doping effects on optical properties of c-axis orientated ZnO:Al thin films prepared by the sol-gel method

作者：Xu Zi Qiang^*; Deng Hong; Xie Juan; Li Yan

来源：Journal of Optoelectronics - Laser, 2006, 17(3): 257-260.

• Aluminum doping
• Blue shift
• C axis orientation
• Deep level (DL) emission
• Dopant concentration
• Glass substrates
• Linear fitting
• Near band edge (NBE) emission
• Peak position
• Photon energy
• Sol-gel method
• Structural properties
• Transmittance data
• ZnO thin films

Pure and Al doped ZnO thin films were fabricated on glass substrates by sol-gel method. An X-ray diffraction (XRD) was used to analyse the structural properties of the thin films. It is found that all the thin films have a preferential c-axis orientation. With the increase of Al doping, the peak position of the (002) plane is shifted to the low 26 value. From the spectrometer transmittance data, the band gap energies of Al doped ZnO films were calculated by a linear fitting method. The band gap is found to be large with the increasing dopant concentration. It is found from the photoluminescence (PL) measurement that near band edge (NBE) emission and deep-level (DL) emission are observed in pure ZnO thin films. However, when Al is doped into thin films, the DL emissions of the thin films are depressed. As the concentration of Al increases, the peak of NBE emission has a blue-shift to region of higher photon energy, which is coincident with those values calculated by the linear fitting from the transmittance data.

• 出版日期2006
• 单位电子科技大学