Memristor-based memory: The sneak paths problem and solutions

作者：Zidan, Mohammed Affan^*; Fahmy, Hossam Aly Hassan; Hussain, Muhammad Mustafa; Salama, Khaled Nabil

来源：MICROELECTRONICS JOURNAL, 2013, 44(2): 176-183.

DOI：10.1016/j.mejo.2012.10.001

• Nanotechnology
• Memory
• Memory array
• Memristor
• Sneak paths

In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.

• 出版日期2013-2