An interface charge model for ferroelectric field effect transistor

作者：Xiao, Y. G.^*; Wang, J.; Ma, D. B.; Tang, M. H.^*; Li, Z.

来源：Integrated Ferroelectrics, 2016, 176(1): 54-62.

DOI：10.1080/10584587.2016.1248746

• FeFET
• interface charge
• memory window
• FeCMOS

An interface charge model for ferroelectric-gate field-effect transistor (FeFET) is developed by combining the basic device equations of metal-oxide-semiconductor field-effect transistors with the polarization characteristics of ferroelectric thin films. This model presents the characteristics of FeFET considering interface charge between the ferroelectric thin film and the insulator layer. Simulations demonstrate that the interface charge will cause the surface potential of the semiconductor and the drain current left shift, and the memory windows are narrowed down, which are resulted from the space charge of the surface of the semiconductor. Meanwhile, the value of polarization almost does not change in FeFET. Furthermore, the simulation of FeCMOS indicates that the output voltage will left shift as the interface charge increases.

• 出版日期2016
• 单位湘潭大学