A simple photomask with photoresist mask layer for ultraviolet-photolithography and its application for selectively photochemical surface modification of polymers

作者：Kong Yong; Chen Heng Wu^*; Yun Xiao; Hao Zhen Xia; Fang Zhao Lun

来源：Chinese Journal of Analytical Chemistry, 2007, 35(5): 623-627.

• photomask
• AZ photoresist
• polycarbonate
• phtoochemical surface modification
• gold microelectrode

UV spectroscopic study reveals that a positive AZ photoresist films thicker than 40 mu m can hardly transmit the UV lights of the wavelengths raging from 200 to 285 mn. Based on that above mentioned, a simple photomask for UV photolithography was developed that composes of a fused silica substrate coated with a layer of positive AZ photoresist that was employed to mask the UV light from the source. By using a low-pressure mercury lamp that mainly emits 254 nm line as the radiation source, the developed photomask has been applied for selectively photochemical modification of polycarbonate (PC) sheets. After a layer of catalyst of nano gold particles was formed on the irradiated area, micro gold electrodes for amperometric detection were fabricated by electroless plating on micro electrophoresis chips made of PC sheets. Without need of a cleanroom, the photomasks can be fabricated by analysts engaged in microfluidic chips or bio-chips in their chemical laboratories with low-cost materials and simple procedures.

• 出版日期2007-5
• 单位浙江大学