Modeling Power Vertical High-k MOS Device With Interface Charges via Superposition Methodology-Breakdown Voltage and Specific ON-Resistance

作者：Wang, Zhigang^*; Wang, Xi; Kuo, James B.

来源：IEEE Transactions on Electron Devices, 2018, 65(11): 4947-4954.

DOI：10.1109/TED.2018.2870174

• Analytical model
• breakdown voltage (BV)
• interface charge
• superjunction (SJ)
• high dielectric

An analytical model for the power vertical MOS device with a high-k insulating dielectric (HKMOS) is derived via the superposition methodology on the condition of punchthrough. Considering three portions-the superjunction part, the p-i-n diode, and the interface charges at the heterointerface based on the conservation of electric displacement, the HKMOS device could be modeled well as verified by the 2-D simulation results.

• 出版日期2018-11
• 单位西南交通大学