摘要
The effects of HCl-based chemical and Ar(+) sputter etching treatment on (100) GaAs surface properties with the aim to develop the procedure of surface preparation before metal deposition have been investigated. Variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, atomic force microscopy and photoluminescence have been used to study the surface characterization. We show that combining chemical etching in 5% HCl with Ar(+) sputter etching gives the best results for surface cleaning prior to metal deposition.
- 出版日期2009