Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(001) substrate

作者：Wang Ke-Fan^*; Zhang Yang; Zhang Weifeng

来源：Applied Surface Science, 2012, 258(6): 1935-1939.

DOI：10.1016/j.apsusc.2011.06.150

• Ge quantum dots
• Molecular beam epitaxy
• Atomic force microscope
• Photoluminescence

High density and ultrasmall size of Ge quantum dots (QDs) have been achieved directly on Si(0 0 1) (2 x 1) reconstruction surface. Their detailed morphology was observed by atomic force microscope (AFM) and shows that small pyramids, small domes, huts, and multi-headed large domes coexist in the film grown at 400 degrees C, while small domes and multi-headed large domes formed at 450 degrees C. Their low temperature photoluminescence (PL) showed that a very strong non-phonon (NP) peak with a large blue shift of 0.19 eV at 14 K, which can be attributed to their very high areal density, 5.2 x 1011 cm(-2), and sub-10-nm mean size, 7.6 +/- 2.3 nm.

• 出版日期2012-1-1
• 单位河南大学