Using the semiconductor properties of certain modifications of titanium silicides obtained by rapid heat treatment to create photodetectors

作者:Emel'yanenko Yu S*; Kolos V V; Markevich M I; Chaplanov A M; Stel'makh V F
来源:Journal of Optical Technology, 2010, 77(8): 519-520.
DOI:10.1364/JOT.77.000519

摘要

The optical properties of the Au/TiSi(2)(C49)/Si(n-type)/Si system, formed by rapid heat treatment, have been investigated. It is shown that the maximum spectral sensitivity occurs in the 750-nm region. The maximum sensitivity reaches 35 mA/W in the 750-800-nm wavelength region. It is concluded that, based on the given structure, which is completely compatible with known technology used for implementing semiconductor devices based on silicon (silicon technology), it is possible to create a photodetector that is sensitive in the 350-1050-nm region.

  • 出版日期2010-8

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