A 0.6 V, 4.32 mW, 68 GHz low phase-noise VCO with intrinsic-tuned technique in 0.13 mu m CMOS

作者：Chen Hsien Ku^*; Chen Hsien Jui; Chang Da Chiang; Juang Ying Zong; Lu Shey Shi

来源：IEEE Microwave and Wireless Components Letters, 2008, 18(7): 467-469.

DOI：10.1109/LMWC.2008.925106

• accumulation-mode
• back-gate
• CMOS
• intrinsic tuned
• millimeter-wave (MMW)
• phase noise
• quality factor
• small chip size
• varactor
• voltage controlled oscillator (VCO)

An intrinsic-tuned, 68 GHz voltage controlled oscillator (VCO) without an extra on-chip accumulation-mode metal oxide semiconductor (MOS)-varactor is demonstrated in a standard, 0.13 mu m CMOS technology. This VCO exhibits phase noises of -98.4 dBc/Hz and -115.2 dBc/Hz; at 1 and 10 MHz offset, respectively, along with a tuning range of 4.5% even under a small power consumption of 4.32 mW. Besides, the highest figure-of-merit (taking frequency tuning range into account) of - 182 dBc/Hz under the 1 MHz offset condition is achieved among all previously reported >60 GHz CMOS-based VCOs, which is attributed to the proposed intrinsic tuning mechanism.

• 出版日期2008-7
• 单位中国科学院电工研究所