Microwave Determination of Quantum-Well Capture and Escape Time in Light-Emitting Transistors

作者：Wang Hsiao Lun^*; Chou Peng Hao; Wu Chao Hsin

来源：IEEE Transactions on Electron Devices, 2013, 60(3): 1088-1091.

DOI：10.1109/TED.2013.2242330

• Capture time
• escape time
• light-emitting transistor (LET)
• quantum well (QW)

We report the determination of In0.20Ga0.80As quantum-well (QW) capture and escape time by utilizing electrical microwave measurement on an InGaP/GaAs light-emitting transistor (LET) platform. The emitter-to-collector transit times tau(ec) of the LET and the heterojunction bipolar transistor (HBT) are measured and extracted under the same bias condition (V-bc = 0 V and J(c) = 22.6 kA/cm(2)). Small-signal model analysis shows that the LET exhibits a larger base transit time tau(t) of 25 ps compared with 5 ps of the HBT. The difference, i.e., 20 ps, hence is attributed to the carrier capturing/escaping processes caused by the QWs embedded in the base region of the LET.

• 出版日期2013-3