A low-power, low-noise and high linearity 60 GHz wideband CMOS low-noise amplifier for wireless personal area network (WPAN) systems

作者：Lin Yo Sheng^*; Wang Chien Chin; Lee Jen How

来源：Analog Integrated Circuits and Signal Processing, 2014, 80(1): 39-47.

DOI：10.1007/s10470-014-0307-z

• 60 GHz
• CMOS
• Wideband
• Low power
• Low-noise amplifier
• WPAN
• Gain
• Phase linearity
• Power linearity

A low power and low noise figure (NF) 60 GHz wideband low-noise amplifier (LNA) with excellent phase linearity for wireless personal local network (WPAN) systems using standard 90 nm CMOS technology is reported. To achieve sufficient power gain (S-21) and reverse isolation (S-12), the LNA comprises a common-source (CS) stage followed by a cascode stage and a CS stage. The LNA consumes 14.1 mW, achieving S-11 better than -10 dB for frequencies 55.1-59.5 GHz, S-22 better than -10 dB for frequencies 55.1-59.4 GHz, S-12 better than -42.6 dB for frequencies 50-64 GHz, and group delay variation smaller than +/- 13.25 ps for frequencies 50.4-63 GHz. Additionally, high and flat S-21 of 9.9 +/- A 1.5 dB is achieved for frequencies 50.4-62.9 GHz, which means the corresponding 3-dB bandwidth is 12.5 GHz. Furthermore, the LNA achieves minimum NF of 3.88 dB at 55.5 GHz and NF of 4.73 +/- A 0.85 dB for frequencies 50-63.5 GHz, one of the best NF results ever reported for a 60 GHz CMOS LNA.

• 出版日期2014-7