Weak localization in CdO thin films prepared by sol-gel method

作者：Wang, W. J.; Xie, X. J.; Liu, J. Y.; Gao, K. H.^*

来源：Solid State Communications, 2016, 239: 1-4.

DOI：10.1016/j.ssc.2016.04.006

• CdO
• Scanning electron microscopy
• Electron-electron scattering
• Weak localization effect

This paper reports the study of the magnetotransport properties of polycrystalline CdO thin films prepared by the sol-gel method. Both the sheet resistance and electron density as a function of temperature indicate that our samples are degenerate semiconductors. The weak localization (WL) effect is observed in the low temperature range. Applying the two-dimensional WL theory, we have extracted the dephasing length and a relatively large value (the maximum gets to 151 nm at 2 K) is obtained. The temperature dependence of the extracted dephasing length can be well described by the electron electron scattering process, indicating that the electron-electron scattering is main dephasing mechanism for electrons.

• 出版日期2016-7
• 单位河北工业大学; 天津大学