摘要

We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb(2)Te(3)) nanowires with diameters in the range of 20-100 nm. Temperature-dependent resistivity and thermoelectric power (TOP) measurements indicate hole dominant diffusive thermoelectric generation with an enhancement of the TOP for smaller diameter wires up to 110 mu V/K at T=300 K. We measure the magnetoresistance in magnetic fields both parallel and perpendicular to the nanowire [110] axis, where strong anisotropic positive magnetoresistance behavior was observed.

  • 出版日期2010-8