Achieving Extreme Etching Rates by Overcoming Silicon Passivity

作者：Zaid T^*; Starosvetsky D; Irace A; De Laurentis M; Ein Eli Y

来源：Electrochemical and Solid-State Letters, 2010, 13(6): II185-II187.

DOI：10.1149/1.3358141

Ultrarapid anodic dissolution of silicon in HF-free solutions is reported. Although the etch rates are insignificant up to a potential of 25 V, when shifting the potential to higher values of 35-55 V the silicon etch rate reached a record value of more than 30 mu m/min. In addition, surface morphologies are notably affected by the applied potential, modifying the surface from a porous one to a partially polished one.

• 出版日期2010