Size Distribution and Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy

作者：Lu Xiangmeng^*; Koyama Masataka; Izumi Yoshiharu; Nakata Yoshiaki; Adachi Satoru; Muto Shunichi

来源：Japanese Journal of Applied Physics, 2013, 52(2): 025602.

DOI：10.7567/JJAP.52.025602

We studied the size distribution and scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs in the Stranski-Krastanow (SK) mode by molecular beam epitaxy (MBE) at 480 and 510 degrees C as a function of InAlAs coverage. A scaling function of the volume was found for the first time in ternary alloy QDs. The function was similar to that of InAs/GaAs QDs, which agreed with the scaling function for a two-dimensional submonolayer homoepitaxy simulation with a critical island size of i = 1. However, a characteristic of i = 0 was also found as a tail in a large volume.

• 出版日期2013-2