A comparative investigation on sub-micrometer InN and GaN Gunn diodes working at terahertz frequency

作者：Yang, Lin'an^*; Long, Shuang; Guo, Xin; Hao, Yue

来源：Journal of Applied Physics, 2012, 111(10): 104514.

DOI：10.1063/1.4721667

• TRANSIENT ELECTRON-TRANSPORT
• INDIUM NITRIDE
• STEADY-STATE
• WURTZITE INN
• MONTE-CARLO
• MOBILITY

We report on a simulation for wurtzite-InN and GaN Gunn diodes with notch-doping and uniform-doping structural transit regions. Results show that 0.3-1.0 mu m Gunn diodes with a diode area of 500 mu m(2) can generate fundamental frequencies of around 0.2-0.8 THz and rf currents of several hundred mA. InN diodes exhibit more stable oscillations, whereas GaN diodes generate higher oscillation frequencies at both dipole-domain mode and accumulation-domain mode due to different negative differential resistance (NDR) characteristics of high-field transport. The sharp NDR region of InN makes it more suitable for short transit region Gunn diode. Higher I-rf/I-av and lower bias voltage in InN Gunn diode imply its conversion efficiency significantly higher than GaN diode.

• 出版日期2012-5-15
• 单位西安电子科技大学