A Novel Deep-Impurity-Level Assisted Tunneling Technology for Enhanced Interband Tunneling Probability

作者：Jia, RunDong; Huang, QianQian; Wu, ChunLei; Zhao, Yang; Wang, JiaXin; Huang, Ru

来源：13th IEEE International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Hangzhou, PEOPLES R CHINA, 2016-10-25 To 2016-10-28.

DOI：10.1109/ICSICT.2016.7999004

• Current enhancement
• Deep impurities
• Enhanced band
• Impurities in
• Interband tunneling
• Tunnel FET

In this work, a novel deep-impurity-level assisted tunneling technology with enhanced band to band tunneling (BTBT) probability is proposed and experimentally demonstrated. Through implanting deep level impurities in the tunnel junction, continuous deep level states can be introduced to facilitate the BTBT process for significant BTBT probability boosting. Compared with conventional tunnel diodes, the fabricated deep-impurity-level assisted tunnel diodes exhibit 7.8x and 23x current enhancement in P++/N+ and N++/P+ tunnel diodes respectively, showing its great potential for future current enhancement in tunnel FETs.

• 出版日期2016
• 单位北京大学