Development of a-SiOx:H solar cells with very high V(oc)xFF product

作者：Kim Do Yun^*; Guijt Erwin; van Swaaij Rene A C M M; Zeman Miro

来源：Progress in Photovoltaics: Research and Applications , 2015, 23(6): 671-684.

DOI：10.1002/pip.2581

• wide-gap
• high open-circuit voltage
• high efficiency
• a-SiOx:H
• CO2
• solar cell

In this study, deposition conditions for making a-SiOx:H are investigated systematically in order to obtain a high band gap material. We found that at given optical band gap, a-SiOx:H with favorable opto-electronic properties can be obtained when deposited using low CO2 flow rates and deposition pressures. We also found that a low radio frequency power density is required in order to limit the effect of ion bombardment on the material properties of i-a-SiOx:H and thereby the solar cell performance. In addition, by decreasing the heater temperature from 300 to 200 degrees C when making the i-a-SiOx:H, the V-oc can be increased. We employed optimized p-doped and n-doped a-SiOx:H films into the p-i-n solar cells, and as a consequence, a high V-oc of over 1V and high fill factor (FF) are obtained. When depositing on texture-etched ZnO:Al substrates, a high efficiency a-SiOx:H single junction solar cell having a high V(oc)xFF product of 0.761 (V-oc: 1.042V, J(sc): 10.3mA/cm(2), FF: 0.73, efficiency: 7.83%) was obtained. The a-SiOx:H solar cell shows comparable light degradation characteristics to standard a-Si:H solar cells.

• 出版日期2015-6