摘要

Stannites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. I-2-II-IV-VI4 nanocrystals of Cu2ZnSnSe4 are stannite material with a near-optimum band gap of similar to 1.5 eV. Semiconductor Cu2ZnSnSe4 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction Cu2ZnSnSe4 solar cell under AM1.5G are as follows: open circuit voltage of 308 mV, short-circuit current of 29.9 mA/cm(2), fill factor of 27%, and a power conversion efficiency of 2.48%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals Cu2ZnSnSe4 nanorods is proposed.

  • 出版日期2013-8-1