Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes

作者：Cao Kewei; Fu Binglei; Liu Zhe; Zhao Lixia; Li Jinmin; Wang Junxi; Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences; Research; Development Center for Semiconductor Lighting Chinese Academy of Sciences

来源：Chinese Journal of Semiconductors, 2016, 37(01): 77-80.

DOI：10.1088/1674-4926/37/1/014008

The origin of anomalous luminescence efficiency enhancement of short-term aged Ga N-based blue light-emitting diodes was studied. We found that the intensity of the electroluminescence and photoluminescence spectra were both increased in the very beginning period of aging. With the help of a rate-equation model, we concluded that this kind of luminescence efficiency enhancement is a joint effect of the defect reduction in active layers and the changes out of active layers, for example the Mg acceptor annealing.

• 出版日期2016-1-15