Modification of electrical properties of the Au/1,1 ' dimethyl ferrocenecarboxylate/n-Si Schottky diode

作者：Aydin M Enver; Yakuphanoglu Fahrettin^*; Ozturk Gulsen

来源：Synthetic Metals, 2010, 160(19-20): 2186-2190.

DOI：10.1016/j.synthmet.2010.08.006

• Organic Schottky diode
• Interface properties

The electrical and interface state density properties of the Au/1,1' dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1' dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters.

• 出版日期2010-10