摘要
This paper presents a novel integrated MEMS inertial sensor with a wide range of acceleration from 0.1G to 20 G (G = 9.8 m/s(2)) and with a design suitable for CMOS integration. Owing to the high-density of post-processed gold and the multi-metal layer technology, we have implemented different types of single-axis MEMS capacitive inertial sensors on a single chip of 4 x 4 mm(2) in area to obtain a wide sensing range. The estimated Brownian noise was between 82.4 nG/Hz(1/2) and 1.11 mu G/Hz(1/2). The experimental results show that the MEMS sensor has higher sensing resolution than those of conventional MEMS accelerometers.
- 出版日期2015-8