摘要

Development of a microfabrication process is essential to embed fascinating physical properties of functional materials into mesoscopic devices. Different from well-investigated materials with established microfabrication process, newly-discovered materials often meet difficulty when scaling down into a mesoscopic size, because process damages cause serious deterioration of their functionalities. Here, we demonstrate a versatile lift-off method using a carefully designed sacrificial bilayer, composed of an easily soluble layer and a thermally stable rigid layer. In this method, the target films can be grown in optimum conditions, such as high temperature and high oxygen partial pressure, on the stable pre-patterned substrate with the inorganic sacrificial bilayer. After film deposition, measurable patterned devices can be obtained just by a short-time lift-off in a mild chemical solution. We carried out micron-scale patterning and electrical measurements by applying this technique to one of perovskite oxides, SrRuO3, and Fe-based chalcogenide superconductors, FeSe, both of which are incompatible with conventional photolithography and dry-etching processes. The demonstrated narrowest line width of 5 mu m is successfully patterned with maintaining the almost identical properties of the pristine films, exemplifying that process damage is minimized. The demonstrated versatile patterning process expands the range of application of emerging functional materials in thin film devices.

  • 出版日期2017-8