Analog/RF performance of four different Tunneling FETs with the recessed channels

作者：Li, Wei; Liu, Hongxia^*; Wang, Shulong^*; Chen, Shupeng

来源：Superlattices and Microstructures, 2016, 100: 1238-1248.

DOI：10.1016/j.spmi.2016.11.005

• Tunneling field effect transistor (TFET)
• Gate capacitance
• Cut-off frequency
• Gain bandwidth product

In this paper, the performance comparisons of analog and radio frequency (RF) in the four different tunneling field effect transistors (TFETs) with the recessed channels are performed. The L-shaped channel TFET (LTFET), U-shaped channel TFET (UTFET), U-shaped channel with L-shaped gate TFET (LGUTFET) and U-shaped channel with dual sources TFET (DUTFET) are investigated by using Silvaco-Atalas simulation tool. The transconductance (g(m)), output conductance (g(ds)), gate capacitance (C-gg), cut-off frequency (f(T)) and gain bandwidth product (GBW) are the parameters by analyzed. Among all the considered devices, the DUTFET has the maximum g(m) and g(ds) due to the improved on-state current by dual sources, and the LTFET has the minimum C-gg because of the minimum gate-to-drain capacitance (C-gd). Since analog/RF characteristics of a device are proportional to g(m) and inversely proportional to C-gg, the LTFET and DUTFET have better analog/RF performance compared to the UTFET and LGUTFET. The extracted largest f(T) is 3.02 GHz in the LTFET and the largest GBW is 1.02 GHz in the DUTFET. The simulation results in this paper can be used as a reference to choose the TFET among these four TFETs for analog/RF applications.

• 出版日期2016-12
• 单位西安电子科技大学