An Accurate and Verilog-A Compatible Compact Model for Graphene Field-Effect Transistors

作者：Martin Landauer Gerhard; Jimenez David; Gonzalez Jose Luis

来源：IEEE Transactions on Nanotechnology, 2014, 13(5): 895-904.

DOI：10.1109/TNANO.2014.2328782

• Accuracy
• compact model
• field-effect transistor
• graphene
• Verilog-A

The present paper provides an accurate drift-diffusion model of the graphene field-effect transistor (GFET). A precise yet mathematically simple current-voltage relation is derived by focusing on device physics at energy levels close to the Dirac point. With respect to previous work, our approach extends modeling accuracy to the low-voltage biasing regime and improves the prediction of current saturation. These advantages are highlighted by a comparison study of the drain current, transconductance, output conductance, and intrinsic gain. The model has been implemented in Verilog-A and is compatible with conventional circuit simulators. It is provided as a tool for the exploration of GFET-based integrated circuit design. The model shows good agreement with measurement data from GFET prototypes.

• 出版日期2014-9
• 单位中国地震局