An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm NAND Flash Technologies

作者：Kang Myounggon^*; Park Il Han; Chang Ik Joon; Lee Kyunghwan; Seo Seongjun; Park Byung Gook; Shin Hyungcheol

来源：IEEE Electron Device Letters, 2012, 33(8): 1114-1116.

DOI：10.1109/LED.2012.2201442

• Cell-to-cell interferences
• compact model
• direct field effect
• NAND Flash
• NAND string

We propose an accurate compact model of NAND Flash memory, which is fully compatible with a BSIM-4 model. In sub-30-nm NAND Flash, adjacent cells directly affect the channel-edge potential of the selected cell. Due to such direct-channel interference, previous compact models cannot accurately simulate the characteristics of sub-30-nm NAND strings. In this letter, we describe the interference as the threshold voltage variation due to adjacent cells and change the threshold voltage equation of the BSIM-4 model. The equation is semitheoretically derived. Using the proposed model, we simulated several behaviors of 27-nm NAND Flash strings. The results show more than 90% accuracy compared with the silicon measurements.

• 出版日期2012-8