A curvature-compensated CMOS bandgap with negative feedback technique

作者：Li, Xiaochao; Zhou, Liangxi; Chen, Yihui^*; Zhang, Ying; Cao, Chunhui; Guo, Donghui

来源：MICROELECTRONICS JOURNAL, 2016, 52: 104-110.

DOI：10.1016/j.mejo.2016.03.011

• Bandgap reference
• Temperature coefficient
• Power supply rejection
• Negative feedback

This paper propose a novel high-order curvature-corrected CMOS bandgap reference (BGR) utilizing the negative feedback structure. The innovative negative feedback bandgap core not only compensates the exponential nonlinearity of VBE but also improves the power supply rejection ratio (PSRR) and line regulation. The proposed BGR is analyzed and implemented in 0.35-mu m CMOS process. Experimental results of the BGR indicate that a minimum temperature coefficient (TC) of 13 ppm/degrees C @-40 degrees C to 180 degrees C, a PSRR of -64 dB @ 100 Hz, and the 5.2 uV/V line regulation (LNR) from 3V to 3.6V supply voltage at room temperature. The active area of the presented BGR is 133 mu m x 300 mu m.

• 出版日期2016-6
• 单位厦门大学