Numerical investigation of the nanosecond opening-mechanism of drift step recovery diodes

作者：Yang Xiudong^*; Li Yongdong; Wang Hongguang; Li Zhongjie; Ding Zhenjie

来源：Journal of Applied Physics, 2011, 109(1): 014917.

DOI：10.1063/1.3531624

A circuit-fluid coupled model is proposed for describing the dynamics of the electron-hole plasma and the evolution of the electric field in the drift step recovery diodes (DSRDs). The model takes account of the real doping profile of the p(+)-p-n(+) type silicon DSRD and the elementary processes such as the impact ionization, Shockley-Read-Hall recombination and Auger recombination. The current opening process of the DSRD is simulated with the proposed model and then the nanosecond opening-mechanism is investigated. The opening process is found to appear at the base region of the DSRD, due to the high density electron-hole plasma formed at the forward pumping period. According to the opening rate, the opening process can be divided into two stages: a slow stage near the p(+)-p boundary and an abrupt one at p-n junction. Moreover, simulation results show that the p+-p-n+ type DSRD with a lower base tends to generate pulses with shorter rise time and higher peak voltage.

• 出版日期2011-1-1
• 单位西北核技术研究所; 西安交通大学