摘要

Mechanically flexible integrated circuits. (ICs) have gained increasing attention in recent years with emerging markets in portable electronic. Although a number of thin-film transistor (TFT) IC solutions have been reported, I challenges still remain for the fabrication of inexpensive, high performance flexible devices. We report a simple and straightforward solution mechanically exfoliating a thin Si film containing ICs. Transistors and circuits can be prefabricated on bulk silicon wafer with the conventional complementary metal oxide semiconductor (CMOS) process flow without additional temperature or process limitations. The short channel MOSFETs exhibit similar electrical performance before and after exfoliation. This exfoliation process also provides a fast and economical approach to producing thinned silicon wafers, which is a key enabler for three-dimensional (3D) silicon integration based on Through Silicon Vias (TSVs).

  • 出版日期2012-11