Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

作者：Shih Huan Yu; Chu Fu Chuan; Das Atanu; Lee Chia Yu; Chen Ming Jang; Lin Ray Ming^*

来源：Nanoscale Research Letters, 2016, 11(1): 1-9.

DOI：10.1186/s11671-016-1448-z

• GaN
• Ga2O3
• Remote plasma atomic layer deposition (RP-ALD)
• Metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT)
• MOCVD

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 x 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

• 出版日期2016-4-30
• 单位长春大学