科研之友
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摘要
When comparing the extracted carrier mobility of long- and short-channel transistors, special consideration must be given to the metallurgical gate length (L-met), neglecting the impact of source and drain junction profiles. L-met can be identified with nanometer precision by using RF split-C-V measurements, and physical and electrical analysis can demonstrate the accuracy of the method. Another important parameter, the external transistor resistance (R-sd), can be identified with linear current measurements of short-channel devices. However, it is important to quantify the mobility dependence from the gate length in order to obtain an accurate result. A method to estimate the electrical field (E-eff) of short-channel devices is proposed. The extracted short-channel mobility shows a universal behavior identical to the classical long-channel one.
- 出版日期2007-10
- 单位中国地震局
