Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate

作者：Park Seoung Hwan^*; Chung Tae Hoon; Baek Jong Hyeob; Ahn Doyeol

来源：Japanese Journal of Applied Physics, 2015, 54(2): 022101.

DOI：10.7567/JJAP.54.022101

The efficiency droop characteristics of green strain-compensated InGaN/InGaN light-emitting diodes (LEDs) grown on an InGaN substrate are investigated by using the multi-band effective mass theory and drift-diffusion model. The radiative recombination coefficient B-eff of the strain-compensated quantum well (QW) structure is shown to be much larger than that of the conventional QW structure. Also, we find that the effective active volume of the LEDs increases with the inclusion of strain-compensated layers. This can be explained by the fact that the overlap between electron and hole concentrations increases owing to the decrease in internal field. As a result, the efficiency droop phenomenon for the strain-compensated LEDs is expected to be reduced, compared with that for conventional LEDs.

• 出版日期2015-2