Analysis of electrical properties of heterojunction based on ZnIn2Se4

作者：Attia A A; Ali H A M^*; Salem G F; Ismail M I; Al Harbi F F

来源：Optical Materials, 2017, 66: 480-486.

DOI：10.1016/j.optmat.2017.02.055

• Heterojunction
• Transport mechanisms
• Junction parameters
• Photovoltaic characteristics

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (R-s), shunt resistance (R-sh) and diode ideality factor (n) were calculated from the analysis of I -V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 <= V <= 0.5 V) and high (V >= 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I -V) measurements under illumination of 40 mW/cm(2). The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

• 出版日期2017-4