An approach to determine small-signal model parameters for InP-based heterojunction bipolar transistors

作者：Gao JJ^*; Li XP; Wang H; Boeck G

来源：IEEE Transactions on Semiconductor Manufacturing, 2006, 19(1): 138-145.

DOI：10.1109/TSM.2005.863222

• heterojunction bipolar transistor (HBT)
• modeling
• parameter extraction

A new method for the extraction of the small-signal model parameters of InP-based heterojunction bipolar transistors (HBT) is proposed. The approach is based on the combination of the analytical and optimization technology. The initial values of the parasitic pad capacitances are extracted by using a set of closed-form expressions derived from cutoff mode S-parameters without any test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. An advanced design system is then used to optimize only the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between simulated and measured results for an InP HBT with 5 x 5 mu m(2) emitter area over a wide range of bias points up to 40 GHz.

• 出版日期2006-2
• 单位北京邮电大学; 南阳理工学院; 东南大学