科研之友
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摘要
An optimum design approach for a highly efficient power amplifier(PA) using a packaged high-power device is described. Large fundamental load impedance assisted by a simple second harmonic manipulation is explored to improve the efficiency, when maintaining the power density. For demonstration of the performance, the PA is implemented using GaN HEMT device at 2.655 GHz. In the experiment, the fabricated PA achieves power-added efficiency (PAE) of 64.3% (it the saturated output power of 49.2 dBm. For 802.16e mobile worldwide interoperability for microwave access signal, the PA delivers the PAE of similar to 31% and ACLR of -49 dBe at the 10 (113 backed-off power of 40 dBm after the digital feedback predistortion linearization.
- 出版日期2010-4
